cmkt2207 surface mount complementary silicon transistors description: the central semiconductor cmkt2207 consists of one 2222a npn transistor and an individually isolated complementary 2907a pnp transistor, manufactured by the epitaxial planar process and epoxy molded in an sot-363 surface mount package. this ultramini? device has been designed for small signal general purpose and switching applications. marking code: k70 maximum ratings: (t a =25c) symbol npn (q1) pnp (q2) units collector-base voltage v cbo 75 60 v collector-emitter voltage v ceo 40 60 v emitter-base voltage v ebo 6.0 5.0 v continuous collector current i c 600 ma power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics per transistor: (t a =25c unless otherwise noted) npn (q1) pnp (q2) symbol test conditions min max min max units i cbo v cb =60v - 10 - - na i cbo v cb =50v - - - 10 na i cbo v cb =60v, t a =125c - 10 - - na i cbo v cb =50v, t a =125c - - - 10 na i ebo v eb =3.0v - 10 - - na i cev v ce =60v, v eb(off) =3.0v - 10 - - na i cev v ce =30v, v eb(off) =500mv - - - 50 na bv cbo i c =10a 75 - 60 - v bv ceo i c =10ma 40 - 60 - v bv ebo i e =10a 6.0 - 5.0 - v v ce(sat) i c =150ma, i b =15ma - 0.3 - 0.4 v v ce(sat) i c =500ma, i b =50ma - 1.0 - 1.6 v v be(sat) i c =150ma, i b =15ma 0.6 1.2 - 1.3 v v be(sat) i c =500ma, i b =50ma - 2.0 - 2.6 v h fe v ce =10v, i c =0.1ma 35 - 75 - h fe v ce =10v, i c =1.0ma 50 - 100 - h fe v ce =10v, i c =10ma 75 - 100 - h fe v ce =10v, i c =150ma 100 300 100 300 h fe v ce =1.0v, i c =150ma 50 - - - h fe v ce =10v, i c =500ma 40 - 50 - f t v ce =20v, i c =20ma, f=100mhz 300 - - - mhz f t v ce =20v, i c =50ma, f=100mhz - - 200 - mhz c ob v cb =10v, i e =0, f=1.0mhz - 8.0 - 8.0 pf c ib v eb =0.5v, i c =0, f=1.0mhz - 25 - - pf sot-363 case r4 (13-january 2010) www.centralsemi.com
cmkt2207 surface mount complementary silicon transistors electrical characteristics per transistor - continued: (t a =25c) npn (q1) pnp (q2) symbol test conditions min max min max units c ib v eb =2.0v, i c =0, f=1.0mhz - - - 30 pf h ie v ce =10v, i c =1.0ma, f=1.0khz 2.0 8.0 - - k h ie v ce =10v, i c =10ma, f=1.0khz 0.25 1.25 - - k h re v ce =10v, i c =1.0ma, f=1.0khz - 8.0 - - x10 -4 h re v ce =10v, i c =10ma, f=1.0khz - 4.0 - - x10 -4 h fe v ce =10v, i c =1.0ma, f=1.0khz 50 300 - - h fe v ce =10v, i c =10ma, f=1.0khz 75 375 - - h oe v ce =10v, i c =1.0ma, f=1.0khz 5.0 35 - - s h oe v ce =10v, i c =10ma, f=1.0khz 25 200 - - s rbc c v cb =10v, i e =20ma, f=31.8mhz - 150 - - ps nf v ce =10v, i c =100a, r s =1.0k, f=1.0khz - 4.0 - - db t on v cc =30v, v be =0.5v, i c =150ma, i b1 =15ma - - - 45 ns t d v cc =30v, v be =0.5v, i c =150ma, i b1 =15ma - 10 - 10 ns t r v cc =30v, v be =0.5v, i c =150ma, i b1 =15ma - 25 - 40 ns t off v cc =6.0v, i c =150ma, i b1 =i b2 =15ma - - - 100 ns t s v cc =30v, i c =150ma, i b1 =i b2 =15ma - 225 - - ns t s v cc =6.0v, i c =150ma, i b1 =i b2 =15ma - - - 80 ns t f v cc =30v, i c =150ma, i b1 =i b2 =15ma - 60 - - ns t f v cc =6.0v, i c =150ma, i b1 =i b2 =15ma - - - 30 ns sot-363 case - mechanical outline lead code: 1) emitter q1 2) base q1 3) collector q2 4) emitter q2 5) base q2 6) collector q1 marking code: k70 www.centralsemi.com r4 (13-january 2010)
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